| PART |
Description |
Maker |
| HYB18T512161B2F HYB18T512161B2F-20_25 |
512-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
| HYB18T512161BF-26 HYB18T512161BF-28 |
512-Mbit x16 DDR2 SDRAM
|
http://
|
| M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
| NAND01G-N NAND01GR3N6 NAND01GR4N5 |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
|
Electronic Theatre Controls, Inc.
|
| HYB18TC256160AF1 HYB18TC256160AF-3S |
256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM
|
Qimonda AG
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| HYMP112S64M8-C4 HYMP564S646-E3 HYMP532S64P6-E3 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. 64M X 64 DDR DRAM MODULE, 0.6 ns, ZMA200
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HYB25D512160BC-6 HYB25D512800BC-6 |
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
512-Mbit Double-Data-Rate SDRAM 64M X 8 DDR DRAM, 0.7 ns, PBGA60
|
Qimonda AG
|
| HYB18T512800B2FL-3S HYB18T512400B2F-3.7 |
512-Mbit Double-Data-Rate-Two SDRAM 64M X 8 DDR DRAM, 0.45 ns, PBGA60
512-Mbit Double-Data-Rate-Two SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA60
|
Qimonda AG
|
| HYI25D512160CT-5 HYI25D512160CT-6 HYI25D512160CC-5 |
512-Mbit Double-Data-Rate SDRAM
|
Qimonda AG
|
| HYB18T512160AF-37 HYB18T512400AC-37 HYB18T512400AC |
512-Mbit Double-Data-Rate-Two SDRAM
|
INFINEON[Infineon Technologies AG]
|
